Regioregular Narrow-Bandgap n-Type Polymers with High Electron Mobility Enabling Highly Efficient All-Polymer Solar Cells.
Sign Up to like & getrecommendations! Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202102635
Abstract: Narrow-bandgap n-type polymers with high electron mobility are urgently demanded for the development of all-polymer solar cells (all-PSCs). Here, two regioregular narrow-bandgap polymer acceptors, L15 and MBTI, with two electron-deficient segments are synthesized by copolymerizing… read more here.
Keywords: bandgap; polymer; high electron; narrow bandgap ... See more keywords
Cyano-Functionalized n-Type Polymer with High Electron Mobility for High-Performance Organic Electrochemical Transistors.
Sign Up to like & getrecommendations! Published in 2022 at "Advanced materials"
DOI: 10.1002/adma.202201340
Abstract: n-Type organic mixed ionic-electronic conductors (OMIECs) with high electron mobility are scarce and highly challenging to develop. As a result, the figure-of-merit (μC*) of n-type organic electrochemical transistors (OECTs) lags far behind the p-type analogs,… read more here.
Keywords: electron mobility; high electron; polymer; type ... See more keywords
Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202211738
Abstract: Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges… read more here.
Keywords: contact; high electron; gan high; ti3c2tx mxene ... See more keywords
Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202202019
Abstract: The extraordinary optoelectronic properties and continued commercialization of GaN enable it a promising component for neuromorphic visual system (NVS). However, typical GaN‐based optoelectronic devices demonstrated to data only show temporary and unidirectional photoresponse in ultraviolet… read more here.
Keywords: algan gan; mobility transistor; high electron; gan high ... See more keywords
Enhancement of electron mobility in GaAs/AlxGa1-xAs square-parabolic double quantum well HEMT structure
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-018-3727-3
Abstract: We show that the enhancement of electron mobility μ as function of well width w can be achieved in a GaAs/AlxGa1-xAs square-parabolic double quantum well (SPDQW) high electron mobility transistor (HEMT) structure. We consider the… read more here.
Keywords: quantum well; double quantum; electron mobility; quantum ... See more keywords
InP/ZnS quantum dots functionalized AlGaAs/InGaAs open gate high electron mobility transistor
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-018-9134-9
Abstract: The InP/ZnS quantum dots were employed to modify the gate area of AlGaAs/InGaAs high electron mobility transistor. The charge distribution state in the quantum dots would affect the surface potential of the high electron mobility… read more here.
Keywords: mobility transistor; high electron; quantum dots; electron mobility ... See more keywords
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
Sign Up to like & getrecommendations! Published in 2018 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2018.07.015
Abstract: Abstract This paper reviews the rapid advancements being made in the development of high electron mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) and terahertz (300 GHz to 3.5 THz) frequency applications. The… read more here.
Keywords: frequency; inp hemts; high electron; mobility transistors ... See more keywords
Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond
Sign Up to like & getrecommendations! Published in 2021 at "Carbon"
DOI: 10.1016/j.carbon.2021.01.011
Abstract: Abstracts A (113) diamond homoepilayer doped with phosphorus is grown. It presents high crystalline quality and n-type conductivity with a maximum electron mobility of 355 cm2/V.s at 450K. Its electrical properties are compared to those measured… read more here.
Keywords: mobility; phosphorus; electron mobility; diamond ... See more keywords
Orange red iridium complexes with good electron mobility and mild OLED efficiency roll-off
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Organometallic Chemistry"
DOI: 10.1016/j.jorganchem.2018.09.008
Abstract: Abstract Two iridium(III) complexes with 1-(3,5-bis(trifluoromethyl)-pyridin-4-yl)isoquinoline (tntpiq) as main ligand, 2-(5-pyridin-4-yl)-1,3,4-oxadiazol-2-yl)phenol (pop) and 2-(5-pyridin-4-yl)-1,3,4-thiadiazol-2-yl)phenol (psp) as ancillary ligands were investigated. Both complexes emit orange red lights with different photoluminescence efficiencies (Ir(tntpiq)2(pop): λem = 585 nm, Φ = 0.41 and Ir(tntpiq)2(psp):… read more here.
Keywords: efficiency roll; orange red; pyridin; efficiency ... See more keywords
Fermi level pinning, capacitance hysteresis, tunnel effect, and deep level in AlGaN/GaN high-electron-mobility transistor
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106959
Abstract: Abstract This paper presents a detailed investigation of the degradation of two (Pt/Au)–Al0.2Ga0.8N/GaN/Al2O3 high-electron-mobility transistor(HEMT) structures, denoted as HEMT1 and HEMT2, by capacitance–voltage (C–V), forward current–voltage (I–V), and capacitance deep-level transient spectroscopy (DLTS)measurements in the… read more here.
Keywords: deep level; mobility transistor; level; high electron ... See more keywords
High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.
Sign Up to like & getrecommendations! Published in 2018 at "Nano letters"
DOI: 10.1021/acs.nanolett.8b00842
Abstract: InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific… read more here.
Keywords: mobility; temperature dependent; inassb nanowires; electron mobility ... See more keywords