Photoelectron spectra of Al2O2- and Al3O3-via slow electron velocity-map imaging.
Sign Up to like & getrecommendations! Published in 2019 at "Faraday discussions"
DOI: 10.1039/c8fd00165k
Abstract: High-resolution photoelectron spectra of cryogenically-cooled Al2O2- and Al3O3- cluster anions are obtained using slow electron velocity-map imaging. These spectra show vibrationally-resolved detachment from the (X[combining tilde]2B3u) ground state of Al2O2- to the X[combining tilde]1Ag and… read more here.
Keywords: slow electron; velocity map; photoelectron spectra; electron ... See more keywords
Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETs
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0222095
Abstract: In this study, we demonstrate the effects of electron velocity modulation (Δve/ΔVgs) on the microwave power performance for AlGaN/GaN HFETs. In order to conduct the experiments, AlGaN/GaN HFETs with gate lengths ranging from 500 to… read more here.
Keywords: gan hfets; algan gan; electron velocity; power ... See more keywords
Effects of super-Gaussian electron velocity distribution functions on atomic kinetics and radiative emission of hot under-dense gold plasmas
Sign Up to like & getrecommendations! Published in 2025 at "Physics of Plasmas"
DOI: 10.1063/5.0265384
Abstract: The effects of non-Maxwellian electron velocity distribution functions on atomic kinetics and radiative emission properties of high-temperature low-density gold plasmas are numerically investigated. The electron velocity distributions are described as super-Gaussian distribution functions. These distributions… read more here.
Keywords: super gaussian; distribution functions; electron; electron velocity ... See more keywords
Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2973081
Abstract: This article reports on the extraction of the electron velocity as a function of gate bias from N-polar GaN deep recess high-electron-mobility transistors (HEMTs) designed for mm-wave power amplification. Bias-dependent small-signal S-parameter measurements are used… read more here.
Keywords: tex math; electron velocity; inline formula; velocity ... See more keywords