Dynamic Electronic Doping for Correlated Oxides by a Triboelectric Nanogenerator.
Sign Up to like & getrecommendations! Published in 2018 at "Advanced materials"
DOI: 10.1002/adma.201803580
Abstract: The metal-insulator transition of vanadium dioxide (VO2 ) is exceptionally sensitive to charge density and electron orbital occupancy. Thus three-terminal field-effect transistors with VO2 channels are widely adopted to control the phase transition by external… read more here.
Keywords: phase transition; electronic doping; doping; triboelectric nanogenerator ... See more keywords
Electronic Doping and Enhancement of n‐Channel Polycrystalline OFET Performance through Gate Oxide Modifications with Aminosilanes
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202100320
Abstract: Self‐assembled monolayers (SAMs) are widely employed in organic field‐effect transistors to modify the surface energy, surface roughness, film growth kinetics, and electrical surface potential of the gate oxide to control the device's operating voltage. In… read more here.
Keywords: gate oxide; electronic doping; doping enhancement; enhancement channel ... See more keywords
Chemical approaches for electronic doping in photovoltaic materials beyond crystalline silicon.
Sign Up to like & getrecommendations! Published in 2022 at "Chemical Society reviews"
DOI: 10.1039/d2cs00110a
Abstract: Electronic doping is applied to tailor the electrical and optoelectronic properties of semiconductors, which have been widely adopted in information and clean energy technologies, like integrated circuit fabrication and PVs. Though this concept has prevailed… read more here.
Keywords: photovoltaic materials; materials beyond; electronic doping; approaches electronic ... See more keywords
Effect of electronic doping and traps on carrier dynamics in tin halide perovskites
Sign Up to like & getrecommendations! Published in 2022 at "Materials Horizons"
DOI: 10.1039/d2mh00008c
Abstract: Tin halide perovskites have recently emerged as promising materials for low band gap solar cells. Much effort has been invested on controlling the limiting factors responsible for poor device efficiencies, namely self-p-doping and tin oxidation.… read more here.
Keywords: tin halide; carrier; tin; electronic doping ... See more keywords
Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0051942
Abstract: Silicon carbide (SiC) has been considered one of the most important wide bandgap semiconductors for both scientific interest and technological applications. The existence of stacking faults induced inclusions, originated from the “wrong” stacking sequences of… read more here.
Keywords: silicon carbide; properties hexagonal; faults induced; stacking faults ... See more keywords