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Published in 2019 at "iScience"
DOI: 10.1016/j.isci.2019.05.043
Abstract: Summary Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a…
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Keywords:
tunnel junctions;
ferroionic tunnel;
giant electroresistance;
tunnel ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c25259
Abstract: Ferroelectric tunneling junctions have attracted intensive research interest due to their potential applications in high-density data storage and neural network computing. However, the prerequisite of an ultrathin ferroelectric tunneling barrier makes it a great challenge…
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Keywords:
electroresistance;
phase boundary;
dislocation;
ferroelectric tunneling ... See more keywords
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Published in 2020 at "Nature Communications"
DOI: 10.1038/s41467-020-14379-w
Abstract: The term tunnel electroresistance (TER) denotes a fast, non-volatile, reversible resistance switching triggered by voltage pulses in ferroelectric tunnel junctions. It is explained by subtle mechanisms connected to the voltage-induced reversal of the ferroelectric polarization.…
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Keywords:
non volatile;
quasiparticle tunnel;
electroresistance;
electroresistance superconducting ... See more keywords
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Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr00785a
Abstract: Multiferroic tunneling junctions (MFTJs), composed of two magnetic electrodes separated by an ultrathin ferroelectric (FE) thin film as a barrier, have received great attention in multi-functional devices. Recent theoretical and experimental works have revealed that…
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Keywords:
electroresistance;
magnetoresistance tunneling;
multiferroic;
resistance ... See more keywords