Giant Electroresistance in Ferroionic Tunnel Junctions
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DOI: 10.1016/j.isci.2019.05.043
Abstract: Summary Oxide-based resistive switching devices, including ferroelectric tunnel junctions and resistance random access memory, are promising candidates for the next-generation non-volatile memory technology. In this work, we propose a ferroionic tunnel junction to realize a… read more here.
Keywords: tunnel junctions; ferroionic tunnel; giant electroresistance; tunnel ... See more keywords