Gate-Tunable Electrostatic Friction of Grain Boundary in Chemical-Vapor-Deposited MoS2.
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DOI: 10.1021/acs.nanolett.2c04958
Abstract: Two-dimensional (2D) semiconducting materials, such as MoS2, are widely studied owing to their great potential in advanced electronic devices. However, MoS2 films grown using chemical vapor deposition (CVD) exhibit lower-than-expected properties owing to numerous defects.… read more here.
Keywords: electrostatic friction; friction; grain boundary; chemical vapor ... See more keywords