A novel electrostatically doped ferroelectric Schottky barrier tunnel FET: process resilient design
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-017-0987-6
Abstract: This work investigates a process-variation resilient electrostatically-doped ferroelectric Schottky-barrier tunnel FET (ED-FE-SB-TFET) based on negative capacitance (NC). The key attributes of ED-FE-SB-TFET are perovskite ferroelectric (FE) gate stack-induced NC behavior and electrostatic doping to induce… read more here.
Keywords: schottky barrier; electrostatically doped; barrier; doped ferroelectric ... See more keywords
Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00404-6
Abstract: This work investigates the novel device structure, silicon-on-nothing electrostatically doped junctionless tunnel field effect transistor (SON-ED-JLTFET) with high-K stacked hetero-gate technology for its short channel effects (SCEs) immune properties. Here, its analog/RF device performance metrices… read more here.
Keywords: nothing electrostatically; electrostatically doped; silicon nothing; effect ... See more keywords
Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Access"
DOI: 10.1109/access.2024.3457748
Abstract: In this work, we propose a novel Gate and Drain Engineered Schottky Barrier (SB) FET (GDE-SBFET) for biosensing application with significant sensitivity improvement. Two different gate materials are employed by the proposed SB device having… read more here.
Keywords: doped drain; inline formula; schottky barrier; electrostatically doped ... See more keywords