A novel electrostatically doped ferroelectric Schottky barrier tunnel FET: process resilient design
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DOI: 10.1007/s10825-017-0987-6
Abstract: This work investigates a process-variation resilient electrostatically-doped ferroelectric Schottky-barrier tunnel FET (ED-FE-SB-TFET) based on negative capacitance (NC). The key attributes of ED-FE-SB-TFET are perovskite ferroelectric (FE) gate stack-induced NC behavior and electrostatic doping to induce… read more here.
Keywords: schottky barrier; electrostatically doped; barrier; doped ferroelectric ... See more keywords
Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design
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DOI: 10.1007/s12633-020-00404-6
Abstract: This work investigates the novel device structure, silicon-on-nothing electrostatically doped junctionless tunnel field effect transistor (SON-ED-JLTFET) with high-K stacked hetero-gate technology for its short channel effects (SCEs) immune properties. Here, its analog/RF device performance metrices… read more here.
Keywords: nothing electrostatically; electrostatically doped; silicon nothing; effect ... See more keywords