Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel.
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DOI: 10.1021/acsami.2c19596
Abstract: Junctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS2, may also resolve technical… read more here.
Keywords: junctionless; electrostatically highly; mos2; highly doped ... See more keywords