Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs
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DOI: 10.1109/ted.2020.2974966
Abstract: Thanks to their superior transport properties, indium gallium arsenide (InGaAs) metal–oxide–semiconductor field-effect transistors (MOSFETs) constitute an alternative to conventional silicon MOSFETs for digital applications at ultrascaled nodes. The successful integration of this technology is challenged… read more here.
Keywords: electrostatics transport; systematic modeling; variability; electrostatics ... See more keywords