Electrothermal DC characterization of GaN on Si MOS-HEMTs
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DOI: 10.1016/j.sse.2017.08.002
Abstract: Abstract DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance,… read more here.
Keywords: methodology; mos hemts; temperature; electrothermal characterization ... See more keywords