Substrate influence on preferential orientation of Bi 2 Te 3 layers grown by physical vapor transport using elemental Bi and Te sources
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DOI: 10.1016/j.matchemphys.2017.06.008
Abstract: Abstract Physical vapor transport growth of Bi2Te3 thin films from elemental Bi and Te sources in high vacuum is presented. Three different kinds of substrates were used: Si (1 0 0), Si (1 1 1)… read more here.
Keywords: physical vapor; orientation; microscopy; elemental sources ... See more keywords