Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions.
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DOI: 10.1364/ao.464029
Abstract: The strong polarization-induced electric field in the multi-quantum well region reduces the radiative recombination rates by separating the electron and hole wave functions, which is one of the most detrimental factors that is to blame… read more here.
Keywords: electric field; embedded junctions; region; algan deep ... See more keywords