Evolution of Electronic States and Emergence of Superconductivity in the Polar Semiconductor GeTe by Doping Valence-Skipping Indium.
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DOI: 10.1103/physrevlett.124.047002
Abstract: GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. Here, we report a superconductor-semiconductor-superconductor transition controlled by finely-tuned In doping. Our results… read more here.
Keywords: electronic states; semiconductor; valence; evolution electronic ... See more keywords