Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation
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DOI: 10.1021/acsnano.2c04841
Abstract: Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high… read more here.
Keywords: memory; heavy ion; ion radiation; emerging memories ... See more keywords