Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
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DOI: 10.1063/1.5000844
Abstract: Deep ultraviolet (UV) optical emission below 250 nm (∼5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in… read more here.
Keywords: quantum; emission 219; gan aln; deep emission ... See more keywords