A virtual-source emission-diffusion I-V model for ultra-thin black phosphorus field-effect transistors
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DOI: 10.1063/1.5064474
Abstract: In this paper, we develop an analytic model based on the theory of virtual-source emission-diffusion (VS-ED) to describe ambipolar current conduction in ultrathin black phosphorus (BP) field-effect transistors (FETs). Unlike the VS model which is… read more here.
Keywords: virtual source; source; emission diffusion; effect ... See more keywords