Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy
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DOI: 10.1088/1361-6641/abed8d
Abstract: We report the emission kinetics of a single-electron trap (E1, E C–0.63 eV) in Sn-doped ( 2ˉ 01) β-Ga2O3 crystals studied using deeplevel transient spectroscopy (DLTS). The time constant ( τ ) of the electrons… read more here.
Keywords: emission kinetics; emission; transient spectroscopy; field ... See more keywords