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Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.09.234
Abstract: Abstract Germanium crystals were implanted with low-energy and high-dose silicon ions. The implantation led to amorphization of a near-surface layer due to the formation of many adatoms and vacancies. Adatoms can be absorbed in germanium…
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Keywords:
emission silicon;
luminescence emission;
white luminescence;
germanium ... See more keywords