Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.12.036
Abstract: Abstract In this work, we report on the metal-organic-chemical-vapour-deposition (MOCVD) and characterization of Al-rich thin layers of AlGaN on conductive GaN, to be used as emitter-base barriers for graphene hot electron transistors. After preliminary experiments,… read more here.
Keywords: gan; electron; barrier; bulk gan ... See more keywords
Design of two-terminal-electrode vertical thyristor as cross-point memory cell without selector
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5040426
Abstract: We proposed a two-terminal-electrode vertical thyristor and investigated its suitability as a cross-point memory cell without a selector from the viewpoints of p+- and n+-base region width and a vertically stacked doped-epitaxial-Si layer structure such… read more here.
Keywords: cross point; emitter base; base; base emitter ... See more keywords