Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness
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DOI: 10.1016/j.spmi.2017.09.053
Abstract: Abstract We demonstrate both theoretically and experimentally that the power density of resonant tunneling diode (RTD) can be enhanced by optimizing emitter spacer layer thickness, in addition to reducing barrier thickness. Compared to the widely… read more here.
Keywords: emitter spacer; layer thickness; power; spacer layer ... See more keywords