Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules
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DOI: 10.1109/tie.2017.2745442
Abstract: This paper proposes the adoption of the inherent emitter stray inductance $L_{{\rm{eE}}}$ in high-power insulated gate bipolar transistor modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP… read more here.
Keywords: high power; emitter stray; thermo sensitive; stray inductance ... See more keywords