Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study
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DOI: 10.1021/acsomega.8b02836
Abstract: In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al2O3), titanium oxide (TiO2), and hafnium oxide… read more here.
Keywords: employing different; transistors employing; graphene field; effect transistors ... See more keywords