Performance investigation of heterogeneous gate dielectric-gate metal engineered–gate all around-tunnel FET for RF applications
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DOI: 10.1007/s00542-016-3143-5
Abstract: In this work, the effect of gate metal work function engineering (GME), gate bias and drain bias on the bias dependent parasitic capacitances has been studied. Further, RF Figure of merits (FOMs) such as power… read more here.
Keywords: engineered gate; gate metal; metal engineered; gate ... See more keywords
High-performance engineered gate transistor-based compact digital circuits
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DOI: 10.1049/el.2016.3899
Abstract: A novel method for designing and realising compact digital circuits by engineering MOSFET gate electrode is proposed. The novelty is the use of gate engineered single devices in the pull-up (PU) and pull-down (PD) paths… read more here.
Keywords: compact digital; engineered gate; digital circuits; gate ... See more keywords