Floquet Engineering of Gapped 2D Materials
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618040176
Abstract: It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band structure of the materials. As… read more here.
Keywords: engineering gapped; gapped materials; field; dressing field ... See more keywords