Epitaxial strain engineering of luminescent properties in ZnGa2O4:Mn thin films
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DOI: 10.35848/1882-0786/aba286
Abstract: Epitaxial strain engineering of luminescent properties in ZnGa2O4:1%Mn thin films was demonstrated by changing both the O2 gas pressure in the deposition chamber and the film thickness. Films were prepared under pressures of 0.2 and… read more here.
Keywords: engineering luminescent; epitaxial strain; luminescent properties; strain ... See more keywords