Engineering Ge Profiles in Si/SiGe Heterostructures for Increased Valley Splitting
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DOI: 10.1021/acs.nanolett.5c02848
Abstract: Electron-spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction-band valleys. While sharp quantum-well interfaces are pursued to increase the valley-splitting energy deterministically, here we explore an… read more here.
Keywords: valley splitting; engineering profiles; valley; sige heterostructures ... See more keywords