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Published in 2018 at "Solid-state electronics"
DOI: 10.1016/j.sse.2018.10.006
Abstract: The inevitable current overshoot which follows forming in filamentary RRAM devices is often perceived as a source of variability that should be minimized. This sentiment has led to efforts to curtail the overshoot by decreasing…
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Keywords:
parasitic engineering;
control;
rram control;
rram ... See more keywords