Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process
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DOI: 10.1016/j.apsusc.2020.145957
Abstract: Abstract An electrochemical etching-enhanced CMP process was proposed to realize the highly efficient and damage-free finishing of GaN. In this process, electrochemical etching was first used to remove the damaged layer induced by grinding or… read more here.
Keywords: enhanced cmp; etching; electrochemical etching; etching enhanced ... See more keywords