Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias
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DOI: 10.1063/5.0011831
Abstract: In this work, the breakdown characteristics and the electroluminescence (EL) spectra of a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias were investigated at different temperatures. The failure of the metal/p-GaN junction, which was caused by electron transport… read more here.
Keywords: metal gan; enhanced hole; thermally enhanced; metal ... See more keywords