Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
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DOI: 10.1016/j.jallcom.2017.06.178
Abstract: Abstract Bilayer of NiO x /TiO 2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS)… read more here.
Keywords: resistive random; resistive switching; random access; enhanced resistive ... See more keywords