Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars
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DOI: 10.1049/el.2019.2803
Abstract: A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (IGBT) with n-Si and p-3C-SiC pillars (Si/SiC SJ IGBT) is studied. At the on-state, the n-Si/p-SiC heterojunction acts as a barrier for holes in the n-Si pillar,… read more here.
Keywords: igbt; carrier storage; enhanced superjunction; storage enhanced ... See more keywords