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Published in 2017 at "Materials"
DOI: 10.3390/ma10030322
Abstract: A metal–insulator–metal structure resistive switching device based on H0.5Z0.5O2 (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar…
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Keywords:
switching characteristics;
high ratio;
unipolar resistive;
enhanced unipolar ... See more keywords