Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
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DOI: 10.1016/j.ijhydene.2018.11.183
Abstract: Abstract In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of −0.97 (+0.6)… read more here.
Keywords: depletion mode; enhancement depletion; hydrogen; hydrogen sensing ... See more keywords