Ultralow‐Power and Radiation‐Tolerant Complementary Metal‐Oxide‐Semiconductor Electronics Utilizing Enhancement‐Mode Carbon Nanotube Transistors on Paper Substrates
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202204066
Abstract: The development of eco‐friendly, ultralow‐power and easy‐to‐process electronics is facing dominant challenges in emerging off‐the‐grid applications, such as the Internet of Things (IoTs) and extreme environment explorations at the south/north pole, in the deep sea,… read more here.
Keywords: ultralow power; power; radiation; enhancement mode ... See more keywords
Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.08.005
Abstract: Abstract In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron… read more here.
Keywords: mode; split floating; floating gates; enhancement mode ... See more keywords
490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108109
Abstract: Abstract In this paper, enhancement-mode AlGaN/GaN p-type GaN cap layer high electron mobility transistors (p-GaN HEMTs) with Ti/Au gate metal are fabricated and electrically characterized. The post gate annealing (PGA) treatment at 300 °C for… read more here.
Keywords: threshold voltage; drain current; gan hemts; enhancement mode ... See more keywords
Monolithically integrated enhancement-mode and depletion-mode β-Ga2O3 MESFETs with graphene gate architectures and their logic applications.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b19667
Abstract: Ultra-wide bandgap (UWBG) β-Ga2O3 is a promising material for next-generation power electronic devices. An enhancement-mode (E-mode) device is essential for designing power conversion systems with simplified circuitry and minimal loss. The integration of an E-mode… read more here.
Keywords: mode ga2o3; mode; ga2o3; enhancement mode ... See more keywords
Dynamo Enhancement and Mode Selection Triggered by High Magnetic Permeability.
Sign Up to like & getrecommendations! Published in 2017 at "Physical review letters"
DOI: 10.1103/physrevlett.119.234501
Abstract: We present results from consistent dynamo simulations, where the electrically conducting and incompressible flow inside a cylinder vessel is forced by moving impellers numerically implemented by a penalization method. The numerical scheme models jumps of… read more here.
Keywords: dynamo enhancement; enhancement mode; permeability; magnetic permeability ... See more keywords
Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2016.2625304
Abstract: This letter demonstrates an integration process of in situ Cl- doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl- doped Al2O3 thin film is deposited by the ultrasonic spray… read more here.
Keywords: sub sub; enhancement mode; algan gan; sup ... See more keywords
Threshold Voltage Engineering of Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Different Doping Concentration of In Situ Cl− Doped Al2O3
Sign Up to like & getrecommendations! Published in 2021 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2162-8777/ac12b7
Abstract: This work used mist chemical vapor deposition to deposit an in-situ Cl— doped Al2O3 film. 0.05 vol%, 0.1 vol%, and 0.15 vol% HCl were added to the precursor solutions for Cl— doping. The recess and… read more here.
Keywords: doped al2o3; threshold voltage; enhancement mode; voltage ... See more keywords
High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/abd599
Abstract: We report a recessed-gate enhancement-mode Al2O3-ZrO2/Al0.6Ga0.4N/Al0.4Ga0.6N metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) with drain current as high as 0.48 A mm−1 at a gate-source voltage of +12 V. This was enabled by a pseudomorphic HFET structure… read more here.
Keywords: voltage; mode; recessed gate; enhancement mode ... See more keywords