Graphoepitaxially Side‐By‐Side Nanofins Along Atomic Terraces for Enhancement‐Mode FinFETs with 108 On/Off Ratio
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202400980
Abstract: The innovation of 3D FinFETs using top‐down silicon nanofins represents a significant advancement toward scaling down microchip process nodes to the cutting‐edge 3‐nm level. While bottom‐up semiconductor nanofins also hold promise as building blocks for… read more here.
Keywords: atomic terraces; graphoepitaxially side; side side; side nanofins ... See more keywords
Ultralow‐Power and Radiation‐Tolerant Complementary Metal‐Oxide‐Semiconductor Electronics Utilizing Enhancement‐Mode Carbon Nanotube Transistors on Paper Substrates
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202204066
Abstract: The development of eco‐friendly, ultralow‐power and easy‐to‐process electronics is facing dominant challenges in emerging off‐the‐grid applications, such as the Internet of Things (IoTs) and extreme environment explorations at the south/north pole, in the deep sea,… read more here.
Keywords: ultralow power; power; radiation; enhancement mode ... See more keywords
Design of β‐Ga2O3 Enhancement‐Mode Metal‐Oxide‐Semiconductor Heterojunction Field‐Effect Transistor Using Counter‐Doped β‐Ga2O3 Channel
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400854
Abstract: In this paper, a β‐Ga2O3 enhancement‐mode metal‐oxide‐semiconductor heterojunction field‐effect transistor (MOS‐HJFET) is demonstrated using a counter‐doped β‐Ga2O3 channel, achieved by the diffusion of p‐type nickel oxide (p‐NiO). The junction between the diffused p‐NiO layer and… read more here.
Keywords: ga2o3 channel; doped ga2o3; enhancement mode; channel ... See more keywords
Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.08.005
Abstract: Abstract In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron… read more here.
Keywords: mode; split floating; floating gates; enhancement mode ... See more keywords
490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108109
Abstract: Abstract In this paper, enhancement-mode AlGaN/GaN p-type GaN cap layer high electron mobility transistors (p-GaN HEMTs) with Ti/Au gate metal are fabricated and electrically characterized. The post gate annealing (PGA) treatment at 300 °C for… read more here.
Keywords: threshold voltage; drain current; gan hemts; enhancement mode ... See more keywords
Monolithically integrated enhancement-mode and depletion-mode β-Ga2O3 MESFETs with graphene gate architectures and their logic applications.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b19667
Abstract: Ultra-wide bandgap (UWBG) β-Ga2O3 is a promising material for next-generation power electronic devices. An enhancement-mode (E-mode) device is essential for designing power conversion systems with simplified circuitry and minimal loss. The integration of an E-mode… read more here.
Keywords: mode ga2o3; mode; ga2o3; enhancement mode ... See more keywords
Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0186976
Abstract: This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged… read more here.
Keywords: environment; harsh environment; enhancement mode; material investigations ... See more keywords
Stretchable, enhancement-mode PEDOT:PSS organic electrochemical transistors
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0230947
Abstract: The rise of wearable and implantable bioelectronics necessitates stretchable electronic devices and systems to seamlessly integrate with soft biological environments. Stretchable organic electrochemical transistors (OECTs), based on conducting polymer poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS),… read more here.
Keywords: pedot pss; organic electrochemical; enhancement mode;
Analytical model and experimental validation of critical dependency of pGaN gated AlGaN/GaN enhancement-mode high electron mobility transistor characteristics on trap-assisted tunneling
Sign Up to like & getrecommendations! Published in 2024 at "Journal of Applied Physics"
DOI: 10.1063/5.0231721
Abstract: Enhancement-mode GaN-based high electron mobility transistors are essential for switching applications in power electronics. A heavily Mg-doped pGaN region is a critical feature of these devices. It pulls the Fermi energy level toward its valence… read more here.
Keywords: transistor; mobility; enhancement mode; transistor characteristics ... See more keywords
Dynamo Enhancement and Mode Selection Triggered by High Magnetic Permeability.
Sign Up to like & getrecommendations! Published in 2017 at "Physical review letters"
DOI: 10.1103/physrevlett.119.234501
Abstract: We present results from consistent dynamo simulations, where the electrically conducting and incompressible flow inside a cylinder vessel is forced by moving impellers numerically implemented by a penalization method. The numerical scheme models jumps of… read more here.
Keywords: dynamo enhancement; enhancement mode; permeability; magnetic permeability ... See more keywords
Integration of Gate Recessing and In Situ Cl− Doped Al2O3 for Enhancement-Mode AlGaN/GaN MOSHEMTs Fabrication
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2016.2625304
Abstract: This letter demonstrates an integration process of in situ Cl- doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl- doped Al2O3 thin film is deposited by the ultrasonic spray… read more here.
Keywords: sub sub; enhancement mode; algan gan; sup ... See more keywords