Enhancement of photodetectors devices for silicon nanostructure from study effect of etching time by photoelectrochemical etching technique
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DOI: 10.1016/j.ijleo.2020.164325
Abstract: Abstract Porous silicon (PS) prepared from n-type silicon via photoelectrochemical etching (PECE) technique. The morphology properties of PS specimens that formed with different etching time has been study utilize Scanning electron microscopy (SEM) and it… read more here.
Keywords: technique; photoelectrochemical etching; time; study ... See more keywords