Charge-Based EPFL HEMT Model
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DOI: 10.1109/ted.2019.2893302
Abstract: This paper presents a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and does not introduce any empirical parameter. The central concept is based on… read more here.
Keywords: charge based; based epfl; epfl hemt; model ... See more keywords