Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus
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DOI: 10.1088/1361-6641/aade67
Abstract: Low temperature heteroepitaxy of cubic silicon carbide (3C-SiC) on silicon substrates is key to the low-cost and mass scale hetergeneous integration of 3C-SiC into the semiconductor market. Low temperature growth also opens up the opportunity… read more here.
Keywords: properties type; growth; electrical properties; type sic ... See more keywords