Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis
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DOI: 10.1002/jrs.5860
Abstract: IHP–Leibniz-Institut für innovative Mikroelektronik, Material ResearchSemiconductor Optoelectronics, Frankfurt (Oder), Germany Dipartimento di Fisica, Università di Pisa, Pisa, Italy Institut für Wissenschaftliches Rechnen, Technische Universität Dresden, Dresden, Germany Dresden Center for Computational Material Science, Technische Universität… read more here.
Keywords: phonon coefficient; dependence strain; coefficient epitaxial; temperature dependence ... See more keywords