Metal work function engineering on epitaxial (100)Ge and (110)Ge metal-oxide-semiconductor devices
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DOI: 10.1016/j.mee.2018.07.018
Abstract: Abstract Capacitance-voltage characterization of epitaxial n-type (100)Ge and (110)Ge metal-oxide-semiconductor capacitors (MOS Cs) was performed using two work function Al and Pt gate metals to evaluate the orientation effect on flat-band voltage (VFB) shift, Fermi… read more here.
Keywords: metal; 100 110; work function; epitaxial 100 ... See more keywords