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Published in 2021 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac291c
Abstract: The use of LaInO3 with (110) surface orientation was investigated as a novel orthorhombic substrate for the epitaxial growth of semiconducting BaSnO3 thin films. On the basis of reflection high-energy electron diffraction, energy dispersive x-ray…
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Keywords:
thin films;
epitaxial basno3;
basno3 thin;
density ... See more keywords