Thick epitaxial GaAsBi layers for terahertz components: the role of growth conditions
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DOI: 10.3952/physics.v58i1.3658
Abstract: A series of 1.5 μm-thick epitaxial GaAsBi layers have been grown by molecular beam epitaxy on semi-insulating GaAs(100) substrates at temperatures ranging from 300 to 370°C. Complex studies were carried out with a focus to… read more here.
Keywords: gaasbi layers; epitaxial gaasbi; thick epitaxial; layers terahertz ... See more keywords