Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy
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DOI: 10.1016/j.jallcom.2017.02.006
Abstract: Abstract Vertically well-aligned homo-epitaxial GaN nanowall network (NWN) was grown on metal organic chemical vapor deposited 3.5 μm thick GaN (0001) on c-sapphire by laser assisted molecular beam epitaxy (LMBE). The honeycomb GaN NWN with wall… read more here.
Keywords: temperature; gan nwn; epitaxial gan; gan ... See more keywords