Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.02.006
Abstract: Abstract Vertically well-aligned homo-epitaxial GaN nanowall network (NWN) was grown on metal organic chemical vapor deposited 3.5 μm thick GaN (0001) on c-sapphire by laser assisted molecular beam epitaxy (LMBE). The honeycomb GaN NWN with wall… read more here.
Keywords: temperature; gan nwn; epitaxial gan; gan ... See more keywords
Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN
Sign Up to like & getrecommendations! Published in 2024 at "Scientific Reports"
DOI: 10.1038/s41598-024-65142-w
Abstract: The properties and concentrations of deep-level defects induced by implantations of Si and Mg ions into unintentionally doped (UID) epitaxial GaN have been revealed by using the Laplace-transform photoinduced transient spectroscopy (LPITS) and molecular dynamics… read more here.
Keywords: defects induced; deep level; level defects; implantations ions ... See more keywords