Wafer scale epitaxial germanium on silicon (0 0 1) using pulsed laser annealing
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DOI: 10.1016/j.matlet.2020.129208
Abstract: Abstract Pulsed Nd:YAG (1064 nm) laser was used to crystallize amorphous germanium thin-films on silicon (001) wafer to get epitaxial Ge. Film thickness and laser fluence played a crucial role. Thicker films (≥300 nm) are… read more here.
Keywords: laser; scale epitaxial; germanium; germanium silicon ... See more keywords