Epitaxial and large area Sb2Te3 thin films on silicon by MOCVD
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DOI: 10.1039/d0ra02567d
Abstract: Antimony telluride (Sb2Te3) thin films were prepared by a room temperature Metal–Organic Chemical Vapor Deposition (MOCVD) process using antimony chloride (SbCl3) and bis(trimethylsilyl)telluride (Te(SiMe3)2) as precursors. Pre-growth and post-growth treatments were found to be pivotal… read more here.
Keywords: thin films; large area; epitaxial large; area sb2te3 ... See more keywords