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Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125302
Abstract: Abstract Epitaxial growth of 4H-SiC on 4° off-axis substrates has been performed under different C/Si ratio in order to improve the quality level of epitaxial layer. 4H-SiC homoepitaxial layer is grown in horizontal warm-wall planetary…
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Keywords:
epitaxial layer;
layer;
high quality;
ratio ... See more keywords
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Published in 2022 at "Applied optics"
DOI: 10.1364/ao.474633
Abstract: In this paper, the influences of the depth and width of the oxide trench isolation between pixels, pixel epitaxial layer thickness for different impurity doping concentrations, and light exposure time on electrical crosstalk are characterized…
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Keywords:
cmos image;
electrical crosstalk;
epitaxial layer;
crosstalk ... See more keywords
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Published in 2021 at "Materials"
DOI: 10.3390/ma14040976
Abstract: The purpose of this work is to study the 4H-SiC epitaxial layer properties for the fabrication of a device for neutron detection as an alternative material to diamond detectors used in this field. We have…
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Keywords:
epitaxial layer;
carrier lifetime;
neutron detection;
spectroscopy ... See more keywords
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Published in 2019 at "Micromachines"
DOI: 10.3390/mi10100629
Abstract: In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy…
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Keywords:
epitaxial layer;
sic piezoresistors;
cantilever beam;
type ... See more keywords