Reduction of morphological defects in 4H-SiC epitaxial layers
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.023
Abstract: Abstract Correlation between morphological defects and device yield in the 4H-SiC epitaxial layers were investigated with overlapped morphological defect mapping and device yield mapping figures. The results show the harmful level of various morphological defects… read more here.
Keywords: triangular defects; sic epitaxial; epitaxial layers; morphological defects ... See more keywords
Structural and optical characteristics investigations in oxygen ion implanted GaN epitaxial layers
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.104833
Abstract: Abstract This paper presents the lattice disorder-induced effect by oxygen ion implantation in GaN epitaxial layers. Oxygen ion implantation in GaN epitaxial layers is done with fluencies 5 × 1014 cm−2 and 5 × 1015 cm−2 at 120 keV energy on two different… read more here.
Keywords: implanted gan; gan epitaxial; epitaxial layers; ion implanted ... See more keywords
An all-perovskite p-n junction based on transparent conducting p-La1−xSrxCrO3 epitaxial layers
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4997410
Abstract: Transparent, conducting p-La1−xSrxCrO3 epitaxial layers were deposited on Nb-doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and… read more here.
Keywords: transparent conducting; conducting la1; xsrxcro3 epitaxial; epitaxial layers ... See more keywords
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0049218
Abstract: Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. We report the fabrication and characterization of high-resolution… read more here.
Keywords: resolution; schottky barrier; high resolution; radiation detectors ... See more keywords
Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abe1e8
Abstract: We systematically investigate the compositional uniformity, degree of strain relaxation (DSR), defect structure and surface morphology of GeSn epitaxial layers with 16% Sn, grown by low temperature molecular beam epitaxy (MBE) on Ge-buffered Si(001) substrates.… read more here.
Keywords: gesn epitaxial; strain relaxation; uniformity; epitaxial layers ... See more keywords
Study of lithium incorporation in (111) NiO epitaxial layers grown on c-sapphire substrates using the pulsed laser deposition technique
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/accc41
Abstract: Incorporation of lithium in (111) NiO epitaxial layers grown using the pulsed layer deposition technique on c-sapphire substrates is studied as functions of growth conditions. The effect of Li-inclusion on the structural, morphological, electrical and… read more here.
Keywords: using pulsed; epitaxial layers; 111 nio; incorporation ... See more keywords
Strain engineering of monoclinic domains in K x Na1-x NbO3 epitaxial layers: a pathway to enhanced piezoelectric properties.
Sign Up to like & getrecommendations! Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa715a
Abstract: A novel concept to obtain a ferroelectric material with enhanced piezoelectric properties is proposed. This approach is based on the combination of two pathways: (i) the evolution of a ferroelectric monoclinic phase and, (ii) the… read more here.
Keywords: piezoelectric properties; epitaxial layers; monoclinic domains; strain engineering ... See more keywords
The role of point defects related with carbon impurity on the kink of log J–V in GaN-on-Si epitaxial layers
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac8e0d
Abstract: Carbon impurity as point defects makes key impact on the leakage in GaN-on-Si structures. GaN-based epitaxial layers with different point defects by changing carbon-doped concentration were used to investigate the point defects behavior. It was… read more here.
Keywords: carbon impurity; epitaxial layers; carbon; point defects ... See more keywords
Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acb4a0
Abstract: Second harmonic generation (SHG) intensity, Raman scattering stress, photoluminescence and reflected interference pattern are used to determine the distributions of threading dislocations (TDs) and horizontal dislocations (HDs) in the c-plane GaN epitaxial layers on 6… read more here.
Keywords: epitaxial layers; second harmonic; intensity; gan epitaxial ... See more keywords
Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductors"
DOI: 10.1134/s1063782620140183
Abstract: Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated… read more here.
Keywords: spectroscopy; molecular beam; beam epitaxy; epitaxial layers ... See more keywords
IR Photodetectors Based on Isoperiodic Epitaxial Layers of Lead Tin Chalcogenides
Sign Up to like & getrecommendations! Published in 2019 at "Technical Physics"
DOI: 10.1134/s1063784219030253
Abstract: IR photodetectors have been made on Pb/δ-layer/p-Pb1 –xSnxTe1 –ySey/p+-Pb0.8Sn0.2Te/Au and Au/δ-layer/n-Pb1 –xSnxTe1 –ySey(BaF2)/Pb surface-barrier structures prepared by liquid-phase epitaxy and thermal evaporation. At ~170 K, peak wavelength λp ~ 7.9–8.2 μm, and cutoff wavelength λc… read more here.
Keywords: surface; isoperiodic epitaxial; photodetectors based; epitaxial layers ... See more keywords