Epitaxial growth and electrical performance of graphene/3C–SiC films by laser CVD
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.154198
Abstract: Abstract High electrical conductivity graphene/epitaxial-3C–SiC (G/epi-3C–SiC) composite films have the potential to the applications such as micro-electro-mechanical systems, distributed Bragg reflectors, solar cells, and photocatalysis in harsh environments. In this study, G/epi-3C–SiC composite films were… read more here.
Keywords: epitaxial growth; sic composite; composite films; epi sic ... See more keywords
Electronic transport in epitaxial 4H–SiC based Schottky diodes modified selectively by swift heavy ions
Sign Up to like & getrecommendations! Published in 2020 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105108
Abstract: Abstract Modifications in the defects and electronic transport properties of epitaxial 4H-nSiC(0001) Schottky barrier diodes have been carried out by selective 200 MeV Ag+14 ions irradiation, i.e., ions projected only on the Schottky contact area of… read more here.
Keywords: irradiation; transport; transport epitaxial; epitaxial sic ... See more keywords
β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination
Sign Up to like & getrecommendations! Published in 2024 at "Applied Physics Letters"
DOI: 10.1063/5.0179556
Abstract: One of the most interesting wide-bandgap semiconductor is 4H-SiC that has an indirect wide-bandgap of 3.3 eV. This material holds great potential to develop power devices that find applications in the field of high-voltage and high-temperature… read more here.
Keywords: damage epitaxial; displacement damage; induced displacement; rays induced ... See more keywords
Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0256146
Abstract: Advances in wurtzite nitride ferroelectrics of Al1−xMxN (M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating >200°C, a movement toward… read more here.
Keywords: temperature; high operating; ferroelectric epitaxial; heterostructures high ... See more keywords