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Published in 2019 at "APL Materials"
DOI: 10.1063/1.5125211
Abstract: We here present a method to engineer Ruddlesden-Popper-type antiphase boundaries in stoichiometric homoepitaxial SrTiO3 thin films. This is achieved by using a substrate with an intentionally high ...
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Keywords:
antiphase;
boundaries epitaxial;
engineering antiphase;
antiphase boundaries ... See more keywords
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Published in 2022 at "Proceedings of the National Academy of Sciences of the United States of America"
DOI: 10.1073/pnas.2202189119
Abstract: Significance Semiconductor interfaces are among the most important in use in modern technology. The properties they exhibit can either enable or disable the characteristics of the materials they connect for functional performance. While much is…
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Keywords:
dielectric constants;
srtio3 films;
films dielectric;
epitaxial srtio3 ... See more keywords