Lattice‐Mismatch‐Driven Small‐Angle Moiré Twists in Epitaxially Grown 2D Vertical Layered Heterostructures
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202205403
Abstract: Artificially introduced small twist angles at the interfaces of vertical layered heterostructures (VLHs) have allowed deterministic tuning of electronic and optical properties such as strongly correlated electronic phases and Moiré excitons. But creating a Moiré… read more here.
Keywords: vertical layered; twist; mismatch; epitaxially grown ... See more keywords
Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2016.12.056
Abstract: Abstract Metallic α-FeSi 2 nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up… read more here.
Keywords: grown 110; stability iron; iron silicide; epitaxially grown ... See more keywords
First-principles computational design of unknown flat arsenene epitaxially grown on copper substrate
Sign Up to like & getrecommendations! Published in 2019 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.10.211
Abstract: Abstract Two-dimensional materials play essential roles in utilizing surface reactions, such as catalysts, adsorption and separation of chemicals. Especially, group-V mono-elemental materials are highlighted for transistors, optoelectronic devices, and mechanical sensors. Here, we identify unknown… read more here.
Keywords: surface; copper substrate; first principles; epitaxially grown ... See more keywords
Bismuthene: Epitaxially grown on MoTe2 and its grain boundary
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125787
Abstract: Abstract The growth of bismuthene on MoTe2 is investigated based on first-principles calculation, systematically. The results show that the buckled bismuthene can be grown on MoTe2 at 300 K and can keep stable at 450 K, of… read more here.
Keywords: bismuthene epitaxially; grain boundary; epitaxially grown; bismuthene ... See more keywords
Epitaxially grown semi-vertical and aligned GaTe two dimensional sheets on ZnO substrate for energy harvesting applications
Sign Up to like & getrecommendations! Published in 2019 at "Nano Energy"
DOI: 10.1016/j.nanoen.2018.11.015
Abstract: Abstract Two-dimensional (2D) materials are particularly interesting for increasing the efficiency of optoelectronic devices. Here, we report a solar cell structure based on 2D GaTe nanosheets on m-plane ZnO substrate. Specifically, the 2D GaTe nanosheets… read more here.
Keywords: zno substrate; semi vertical; gate; energy ... See more keywords
Linear and quadratic magneto-optical Kerr effect investigation of Co2Mn1.30Si0.84 epitaxially grown on MgO
Sign Up to like & getrecommendations! Published in 2017 at "Solid State Communications"
DOI: 10.1016/j.ssc.2016.10.016
Abstract: Abstract We investigated the magneto-optical properties of a L21 ordered nonstoichiometric Co2Mn1.30Si0.84 film epitaxially grown on a MgO-buffered MgO (001) single-crystal substrate. Longitudinal magneto-optical Kerr effects (LMOKE) and rotating magneto-optical Kerr effect (ROT-MOKE) measurements suggest… read more here.
Keywords: co2mn1 30si0; optical kerr; kerr; epitaxially grown ... See more keywords
Facets-Directed Epitaxially Grown Lead Halide Perovskite-Sulfobromide Nanocrystal Heterostructures and Their Improved Photocatalytic Activity.
Sign Up to like & getrecommendations! Published in 2022 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.2c08639
Abstract: Lead halide perovskite nanocrystal heterostructures have been extensively studied in the recent past for improving their photogenerated charge carriers mobility. However, most of such heterostructures are formed with random connections without having strong evidence of… read more here.
Keywords: facets directed; nanocrystal heterostructures; halide perovskite; epitaxially grown ... See more keywords
High mobility approaching the intrinsic limit in Ta-doped SnO2 films epitaxially grown on TiO2 (001) substrates
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-63800-3
Abstract: Achieving high mobility in SnO2, which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated… read more here.
Keywords: high mobility; mobility; doped sno2; epitaxially grown ... See more keywords
Thermal conductivity of epitaxially grown InP: experiment and simulation
Sign Up to like & getrecommendations! Published in 2017 at "CrystEngComm"
DOI: 10.1039/c6ce02642g
Abstract: The integration of III–V optoelectronic devices on silicon is confronted with the challenge of heat dissipation for reliable and stable operation. A thorough understanding and characterization of thermal transport is paramount for improved designs of,… read more here.
Keywords: grown inp; conductivity epitaxially; thermal conductivity; epitaxially grown ... See more keywords
Magnetotransport in Bi2Se3 thin films epitaxially grown on Ge(111)
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5048547
Abstract: Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$… read more here.
Keywords: thin films; epitaxially grown; spin; magnetotransport bi2se3 ... See more keywords
Magnetic and structural properties of L10-Mn50Ga50-xAlx epitaxially grown thin films
Sign Up to like & getrecommendations! Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5079878
Abstract: Epitaxially grown L10- MnGa(Al) continuous thin films with the c-axis along the film normal are successfully fabricated on MgO (001) substrates at a substrate deposition temperature Ts of around 400 °C. The order parameter S… read more here.
Keywords: thin films; order; l10; epitaxially grown ... See more keywords