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   Articles with "epitaxy" as a keyword



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Role of Stronger Interlayer van der Waals Coupling in Twin‐Free Molecular Beam Epitaxy of 2D Chalcogenides

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recommendations! Published in 2021 at "Advanced Materials Interfaces"

DOI: 10.1002/admi.202100438

Abstract: Large‐area epitaxy of layered materials is one of the cornerstones for a successful exploitation of van der Waals (vdW) materials in the semiconductor industry. The formation of 60° twin stacking faults and 60° grain boundaries… read more here.

Keywords: epitaxy; epitaxy chalcogenides; van der; der waals ... See more keywords
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Ion Beam-Assisted Solid Phase Epitaxy of SiGe and its Application for Analog Memristors

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recommendations! Published in 2021 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2021.161086

Abstract: Abstract Low dimensional defects such as dislocation in single crystal Si are known to serve as a fast diffusion path of metal ions. Recently, many efforts have been made to employ dislocations in single crystal… read more here.

Keywords: thin films; assisted solid; beam assisted; epitaxy ... See more keywords
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Chemical beam epitaxy of GaAs1-xNx using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As2, H2 and N2

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recommendations! Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2016.11.056

Abstract: Using ab initio calculations, a simple model for GaAs1-xNx vapor-phase epitaxy on (100) surface of GaAs was created. By studying As2 and H2 molecules adsorptions and As/N atom substitutions on (100) GaAs surfaces, we obtain… read more here.

Keywords: gaas1 xnx; gaas1; model; stability ... See more keywords
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Effects of temperature and nitradition on phase transformation of GaN quantum dots grown by droplet epitaxy

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recommendations! Published in 2019 at "Surface and Coatings Technology"

DOI: 10.1016/j.surfcoat.2018.11.031

Abstract: Abstract Droplet epitaxy technique, the formation of gallium metallic droplets in the ultra-high vacuum and then nitridation with nitrogen plasma, was used to grow GaN nanodots on Si (111) by plasma-assisted molecular beam epitaxy. In… read more here.

Keywords: droplet epitaxy; epitaxy; phase transformation; gan nanodots ... See more keywords
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Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten.

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recommendations! Published in 2023 at "Nano letters"

DOI: 10.1021/acs.nanolett.2c04908

Abstract: 3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have… read more here.

Keywords: integration inas; assisted selective; integration; epitaxy ... See more keywords
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Unpredicted Internal Geometric Reconfiguration of An Enclosed Space Formed by Hetero-epitaxy.

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recommendations! Published in 2019 at "Nano letters"

DOI: 10.1021/acs.nanolett.9b04272

Abstract: Epitaxial lateral overgrowth (ELO) over a freestanding dielectric mask is an unexplored territory in selective epitaxy growth (SEG) of semiconductors. By shrinking the dielectric mask dimension to the micron scale, the growth fronts from ELO… read more here.

Keywords: unpredicted internal; dielectric mask; reconfiguration; enclosed space ... See more keywords
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Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy.

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recommendations! Published in 2019 at "ACS nano"

DOI: 10.1021/acsnano.8b08413

Abstract: Semiconductor nanocrystalline heterostructures can be produced by the immersion of semiconductor substrates into an aqueous precursor solution, but this approach usually leads to a high density of interfacial traps. In this work, we study the… read more here.

Keywords: free heterostructure; pbs nanoplatelets; trap free; inp 001 ... See more keywords
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Liquid Phase Edge Epitaxy of Transition-Metal Dichalcogenide Monolayers.

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recommendations! Published in 2023 at "Journal of the American Chemical Society"

DOI: 10.1021/jacs.3c02471

Abstract: Precise monolayer epitaxy is important for two-dimensional (2D) semiconductors toward future electronics. Here, we report a new self-limited epitaxy approach, liquid phase edge epitaxy (LPEE), for precise-monolayer epitaxy of transition-metal dichalcogenides. In this method, the… read more here.

Keywords: edge; transition metal; liquid phase; epitaxy ... See more keywords
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Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors

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recommendations! Published in 2020 at "Scientific Reports"

DOI: 10.1038/s41598-020-59083-3

Abstract: A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applications. In contrast, rapid… read more here.

Keywords: single crystal; epitaxy large; epitaxy; scalable ultrafast ... See more keywords
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Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

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recommendations! Published in 2020 at "CrystEngComm"

DOI: 10.1039/c9ce01926j

Abstract: We present Au catalyzed p-GaAs nanowire growth on n-GaN layers as a possible method to grow an arsenide on a nitride compound semiconductor by metal organic vapor phase epitaxy. The GaAs growth position, the nanowire… read more here.

Keywords: spatially controlled; nanowire growth; nanowire; growth ... See more keywords
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Ordered structure of FeGe2 formed during solid-phase epitaxy

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recommendations! Published in 2018 at "Physical Review Materials"

DOI: 10.1103/physrevmaterials.2.051402

Abstract: Fe3Si/Ge(Fe,Si)/Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solidphase epitaxy (Ge on Fe3Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize… read more here.

Keywords: structure fege2; fe3si; solid phase; structure ... See more keywords